[6月22日]学术报告：Electron Transport Phenomena in Semiconductor an

一👇🏼、 题　目：Electron Transport Phenomena in Semiconductor and Topological Insulator Nanowires

 

二🧼、 报告人：Prof. Xuan Gao（Case Western Reserve University, Department of Physics）

 

四、 时　间：６月２２日（周二），上午１０：００

 

五🤴🏿、 地　点⚀：物理馆５１２学术会议室

 

Abstract:

Semiconductor nanowires are believed to be promising materials for novel nanoelectronic, optoelectronic and biosensor applications. With the small length scale and a variety of material choices, nanowires are also a versatile platform to explore rich mesoscopic physics. I will discuss our recent magneto-transport studies of InAs and Bi2Se3 nanowires. In InAs nanowires with small diameters, we found that quantum interference leads to one-dimensional localization of electrons. For nanowires/ribbons of Bi2Se3, a topological insulator, our magneto-transport experiments revealed a linear quantum magneto-resistance that is consistent with the existence of Dirac electrons on sample surface. 

 

References

[1] D. Liang, M.R. Sakr and X.P.A. Gao, Nano Lett. 9, 1709 (2009).

[2] J. Du, D. Liang, H. Tang and X.P.A. Gao, Nano Lett. 9, 4348 (2009).

[3] D. Liang, J. Du and X.P.A. Gao, Phys. Rev. B, 81, 153304 (2010).

[4] H. Tang, D. Liang, R. L.J. Qiu and X.P.A. Gao, arXiv: 1003.6099.